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A new unified model explains how thickness, defects, interface quality, and roughness together control the behavior of ...
Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel ...
New vertical device architecture promises stable, ultra-dense semiconductor stacking for future AI and high-performance ...
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Key transistor for next-generation 3D stacked semiconductors operates without current leakage
A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer ...
“Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, ...
In a paper published in the journal Nature Electronics, researchers from EPFL’s School of Engineering in the Laboratory of Nanoscale Electronics and Structures (LANES) present a new processor that ...
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MILAN--(BUSINESS WIRE)--Gallium Semiconductor, an innovative supplier of RF Gallium Nitride (GaN) semiconductor solutions, today unveiled its broad portfolio of RF Power Transistor products at the ...
During the GSA US Executive Forum in September 2024, a panel discussion brought together Marco Chisari, EVP from Samsung Semiconductor, Jeff Howell, Global VP for High Tech at SAP, and John Kibarian, ...
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