This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...

A reconfigurable device that can be a p-n diode, a MosFET or a BJT has been made by researchers at SUNY-Polytechnic Institute in Albany, New York. “We can form a single device that can perform the ...

The varactor diode capitalizes on the properties of the depletion layer of a p-n diode. Under reverse bias, the carriers in each region-holes in the p type and electrons in the n type-move away from ...